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The onsemi BCW60C is an NPN epitaxial silicon general-purpose transistor housed in a SOT-23 surface-mount package. It supports a maximum collector current of 100 mA and withstands collector-emitter and collector-base voltages of 32 V. The device features a DC current gain (hFE) ranging from 180 to 460 at IC=2mA, with a transition frequency (fT) of 125 MHz. Power dissipation is rated at 350 mW, and it operates within a temperature range of -55°C to +150°C.
Verify the manufacturer origin carefully, as the BCW60C was originally produced by Fairchild Semiconductor, which has undergone corporate restructuring. Ensure the specific batch or distributor source aligns with your supply chain requirements. Confirm that the component meets all necessary environmental compliance standards required for your final assembly process before placing orders.
Select this component when a standard NPN switch is needed with moderate current handling capabilities up to 100 mA. The high hFE range makes it suitable for driving subsequent stages without excessive base current. Consider the SOT-23 footprint constraints and thermal dissipation limits of 350 mW during circuit layout planning to ensure stable operation under load.
This part belongs to the BCW60A/B/C/D series, differentiated primarily by their DC current gain bins. The 'C' suffix specifically denotes the gain range of 180 to 460. These transistors are widely used in consumer electronics and industrial control boards where space-saving surface-mount technology is preferred over through-hole alternatives.
Direct substitutes include BCW60B and BCW60D, provided their respective gain ranges fit the design margins. Cross-manufacturer equivalents such as Nexperia BCW60C may be considered if pin compatibility and electrical specifications match exactly.