BCW66KFE6327HTSA1

$0.03

Description：TRANS NPN 45V 0.8A PG-SOT23
Series：-

SKU:7cd96e3bde0d Category: Single Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 45V 0.8A PG-SOT23
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：450mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 100mA, 1V
Power - Max：500 mW
Frequency - Transition：170MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：PG-SOT23
Grade：-
Qualification：-

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BCW66KFE6327HTSA1

Overview

The BCW66KFE6327HTSA1 is a single NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is designed for surface-mount applications in the SOT-23-3 package and holds AEC-Q100 automotive qualification. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 75 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum continuous DC collector current of 800 mA with a power dissipation rating of 500 mW. It features a transition frequency (fT) of 170 MHz and a DC current gain (hFE) range from 250 to 630. Operating temperatures span from -65°C to +150°C.

Feature Summary

Automotive-grade reliability certified under AEC-Q100 standards
High DC current gain ranging from 250 to 630 for efficient signal amplification
Compact SOT-23-3 surface-mount package suitable for space-constrained designs

Applications

Automotive electronic circuits requiring qualified discrete semiconductors
General-purpose switching and amplification tasks
Low-voltage signal processing in consumer electronics

Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm that the specific suffix matches the required gain bin and packaging format. Check current lifecycle status as availability may be limited. Ensure storage conditions comply with moisture sensitivity levels specified in the datasheet to maintain device integrity prior to assembly.

Selection Notes

Select this component when automotive qualification is mandatory for NPN BJT applications. Compare hFE ranges against circuit requirements to ensure adequate gain margins. Evaluate thermal management needs given the 500 mW dissipation limit in small packages. Consider alternative packages if higher current handling or different pin configurations are necessary for the specific layout constraints.

Part Context

This part belongs to the BCW66 series of general-purpose NPN transistors. It shares similar electrical characteristics with variants like BCW66KHE6327HTSA1 but differs in specific gain binning and packaging details. The series is widely used in automotive and industrial applications where reliable switching performance and standardized footprints are required for mass production integration.