ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 32V 0.8A PG-SOT23-3-1
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
- Power - Max：330 mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23-3-1
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The BCW67C is a PNP silicon general-purpose transistor from Infineon Technologies, belonging to the BCW67 series. It is housed in an SOT-23-3 surface-mount package and designed for audio frequency applications. The device features a maximum collector current of 1 A and a collector-emitter voltage rating of 32 V. Key electrical parameters include a collector-base voltage of 45 V, an emitter-base voltage of 5 V, and a DC current gain (hFE) ranging from 160 to 400. It operates within a temperature range of -65°C to +150°C with a power dissipation of 330 mW.
Feature Summary
- PNP silicon construction optimized for general-purpose switching and amplification tasks.
- High DC current gain ensuring effective signal control with low base drive requirements.
- Robust thermal performance supporting operation up to 150°C junction temperature.
Applications
- General-purpose switching circuits
- Audio frequency amplification stages
- Driver stages for logic interfaces
Procurement Notes
Verify the specific suffix against official Infineon documentation to confirm exact binning and packaging details. Confirm RoHS compliance status through the manufacturer's latest datasheet or product qualification reports. Ensure the component matches the required hFE binning for your specific circuit design before procurement.
Selection Notes
Select this component when a PNP transistor with high current gain and moderate voltage ratings is required in a compact SOT-23 package. Consider the 32V VCEO limit and 1A Ic capability relative to your load requirements. Verify that the operating temperature range meets your environmental specifications.
Part Context
The BCW67C is part of the BCW67 family of general-purpose PNP transistors. This series is widely used in consumer electronics and industrial equipment for low-power switching and amplification. The component utilizes standard silicon planar technology suitable for mass production in surface-mount assembly processes.
FAQ
What is the maximum collector-emitter voltage for the BCW67C?
The maximum collector-emitter voltage (VCEO) is 32 V.
Is the BCW67C available in a through-hole package?
No, the BCW67C is specifically designed for surface-mount technology (SMD/SMT) in an SOT-23-3 package.
What is the typical application frequency range for this transistor?
It is specified for audio frequency (AF) applications, with a transition frequency (fT) of 200 MHz.
