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The BCW67CE6327HTSA1 is a PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package and features a single configuration. The device supports a maximum collector-emitter voltage of 32 V and a collector-base voltage of 45 V, with an emitter-base voltage rating of 5 V. It handles a continuous collector current of 800 mA and offers a DC current gain ranging from 160 to 400. Key electrical parameters include a transition frequency of 200 MHz, a power dissipation capacity of 330 mW, and a collector-emitter saturation voltage of 300 mV. The component operates within a temperature range of -65°C to +150°C.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Confirm that the part status remains active or managed, as discontinuation notices may affect long-term supply chain stability. Cross-reference datasheet revision dates to ensure parameter consistency during procurement.
Select this component when a PNP transistor with high current capacity and wide thermal tolerance is required in a compact SOT-23-3 footprint. Ensure the application voltage does not exceed the 32 V collector-emitter limit. Consider the 200 MHz transition frequency for moderate-speed switching needs rather than high-frequency RF operations.
This part belongs to the BCW67 series of general-purpose PNP transistors designed for low-power switching applications. It shares the SOT-23-3 form factor common across many Infineon discrete semiconductor products, facilitating space-constrained PCB layouts while maintaining robust electrical characteristics for industrial and automotive environments.
Consult official Infineon substitution guides for verified equivalents. Generic replacements must match the PNP polarity, SOT-23-3 package, and minimum 800 mA current rating.