BCW67CE6327HTSA1

BCW67CE6327HTSA1

  • Description:TRANS PNP 32V 0.8A PG-SOT23
  • Series:-

SKU:cb13c1338e26 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 32V 0.8A PG-SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
  • Power - Max:330 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

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BCW67CE6327HTSA1

Overview

The BCW67CE6327HTSA1 is a PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package and features a single configuration. The device supports a maximum collector-emitter voltage of 32 V and a collector-base voltage of 45 V, with an emitter-base voltage rating of 5 V. It handles a continuous collector current of 800 mA and offers a DC current gain ranging from 160 to 400. Key electrical parameters include a transition frequency of 200 MHz, a power dissipation capacity of 330 mW, and a collector-emitter saturation voltage of 300 mV. The component operates within a temperature range of -65°C to +150°C.

Feature Summary

  • PNP silicon construction for reliable switching performance
  • High current handling capability up to 800 mA
  • Wide operating temperature range extending to +150°C

Applications

  • General-purpose switching circuits
  • Low-voltage signal processing applications
  • Automotive electronics requiring AEC-Q100 qualification

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Confirm that the part status remains active or managed, as discontinuation notices may affect long-term supply chain stability. Cross-reference datasheet revision dates to ensure parameter consistency during procurement.

Selection Notes

Select this component when a PNP transistor with high current capacity and wide thermal tolerance is required in a compact SOT-23-3 footprint. Ensure the application voltage does not exceed the 32 V collector-emitter limit. Consider the 200 MHz transition frequency for moderate-speed switching needs rather than high-frequency RF operations.

Part Context

This part belongs to the BCW67 series of general-purpose PNP transistors designed for low-power switching applications. It shares the SOT-23-3 form factor common across many Infineon discrete semiconductor products, facilitating space-constrained PCB layouts while maintaining robust electrical characteristics for industrial and automotive environments.

Replacement Considerations

Consult official Infineon substitution guides for verified equivalents. Generic replacements must match the PNP polarity, SOT-23-3 package, and minimum 800 mA current rating.

BCW67CE6327HTSA1BCW67CE6327HTSA1

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