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The BCX38C is an NPN silicon planar medium power Darlington transistor manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 800 mA. The device offers a minimum static forward current transfer ratio (hFE) of 5,000 at IC=100mA and 10,000 at IC=500mA. Power dissipation is rated at 1 W at 25°C ambient temperature. The component operates within a junction temperature range of -55°C to +200°C and is available in E-Line or TO-92 compatible packages.
Verify the specific package variant required, as the BCX38C is available in both through-hole TO-92 and E-Line formats. Confirm RoHS3 compliance status for environmental regulations. Ensure the ordering suffix matches the desired mechanical footprint and lead configuration before finalizing procurement orders.
Select the BCX38C when high current gain is required to drive loads directly from low-current logic signals. Compare against BCX38A and BCX38B variants if lower gain thresholds are acceptable for cost optimization. Verify that the 60 V collector-emitter voltage rating exceeds the maximum circuit operating voltage under all transient conditions.
This component belongs to the BCX38 series of NPN Darlington transistors produced by Diodes Incorporated. The series includes variants A, B, and C, differentiated primarily by their DC current gain specifications. The BCX38C represents the highest gain option within this family, suitable for applications demanding maximum sensitivity.
BCX38B and BCX38A are direct functional substitutes within the same series, offering identical electrical ratings but with lower guaranteed current gain thresholds.