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The BCX52-10TF is a PNP power bipolar transistor from the Nexperia BCX52T series, housed in an SOT89 (SC-62) surface-mounted plastic package. It features a collector-emitter voltage of -60 V and a continuous collector current of -1 A. The device offers three DC current gain selections; the -10 variant provides a range of 63 to 160 at VCE = -2 V and IC = -150 mA. Key electrical characteristics include a peak collector current of -2 A, a transition frequency of 140 MHz, and a total power dissipation capability up to 1100 mW on a PCB with a 1 cm² collector pad.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards if intended for automotive use. Ensure the selected gain bin aligns with circuit design requirements before finalizing procurement orders.
Select this component when a PNP medium power transistor with high current handling is required in a compact SMD form factor. Consider the specific hFE bin (-10) to ensure compatibility with base drive requirements. Evaluate thermal performance based on the expected PCB copper area, as power dissipation capabilities vary significantly with mounting pad size.
This part belongs to the BCX52T series of PNP power transistors designed for general-purpose switching and amplification. It serves as the complement to the BCX55T NPN series. The SOT89 package provides a balance between power handling and board space efficiency, making it suitable for various consumer and industrial electronic designs requiring robust discrete semiconductor solutions.
BCX52-10T
The BCX52-10T variant has a DC current gain (hFE) range of 63 to 160, measured at VCE = -2 V and IC = -150 mA.
Yes, the product has been qualified in accordance with the AEC-Q101 standard for stress test qualification of discrete semiconductors.
The maximum peak collector current (ICM) is -2 A for a single pulse with a duration of tp ≤ 1 ms.