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The BCX53TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-89 surface-mount package. It supports a continuous collector current of -1 A and a peak pulse current of -2 A. The device features a collector-emitter breakdown voltage (BVCEO) of -80 V and a collector-base breakdown voltage (BVCBO) of -100 V. Electrical characteristics include a DC current gain (hFE) ranging from 25 to 250 at -500 mA, a transition frequency (fT) of 150 MHz, and a collector-emitter saturation voltage below -500 mV at -0.5 A. Power dissipation reaches 1 W under standard conditions.
Verify the specific part number against official manufacturer documentation to confirm compliance with environmental standards such as RoHS and lead-free requirements. Ensure that the ordering suffix matches the required packaging quantity and reel specifications. Cross-reference datasheet revision numbers to validate electrical parameters before finalizing procurement decisions.
Select this component for designs requiring a PNP transistor with -80 V collector-emitter voltage and -1 A continuous current capability. Consider the SOT-89 package dimensions and thermal resistance values when designing heat dissipation strategies. Verify that the required DC current gain range aligns with the application's biasing needs.
This component belongs to the BCX51/52/53 series of medium power transistors produced by Diodes Incorporated. The series offers complementary NPN options and is designed for general-purpose amplification and switching tasks. The BCX53 variant specifically provides higher voltage ratings compared to the BCX51 and BCX52 models within the same family.
BCX53TC
The maximum collector-emitter breakdown voltage (BVCEO) is -80 V.
Yes, it is totally lead-free, fully RoHS compliant, and halogen and antimony free.