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The BCX55-16TF is an NPN power bipolar transistor from the Nexperia BCX55T series, housed in a SOT89 (SC-62) surface-mounted package. It features a collector-emitter voltage of 60 V and a continuous collector current of 1 A, with a peak pulse current capability of 2 A. The device offers three DC current gain selections; the -16 variant specifies a minimum hFE of 100 at IC = 150 mA and VCE = 2 V. Total power dissipation reaches 500 mW in free air, extending to 1100 mW on a PCB with a 6 cm² collector pad. Transition frequency is typically 155 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and reel specifications. Confirm that the component meets the required AEC-Q101 qualification status if intended for automotive use. Ensure design parameters remain within the absolute maximum ratings defined in the product data sheet to prevent device damage.
Select this component when a medium-power NPN transistor with high current handling is required in a compact surface-mount form factor. The -16 gain bin provides higher amplification suitable for driver applications. Evaluate thermal resistance requirements based on the specific PCB copper area allocated for the collector pad to ensure adequate heat dissipation during operation.
This part belongs to the BCX55T series of NPN power transistors manufactured by Nexperia. The series includes complementary PNP devices such as the BCX52T. The BCX55-16TF specifically denotes the version with the 100-250 hFE gain range, packaged in the standard SOT89 plastic leaded outline designed for automated surface-mount assembly processes.
BCX55-10T
The marking code for the BCX55-16T is B4.
Pin 1 is the emitter, Pin 2 is the collector, and Pin 3 is the base.
Yes, the BCX55T series has been qualified in accordance with the AEC-Q101 standard.