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The BCX5616H6327XTSA1 is an NPN silicon audio frequency transistor manufactured by Infineon Technologies. It operates within a collector-emitter voltage of 80 V and a collector-base voltage of 100 V, supporting a maximum continuous collector current of 1 A. The device dissipates up to 2 W of power at a case temperature of 120°C or lower. Key electrical characteristics include a transition frequency of 100 MHz and a maximum collector-emitter saturation voltage of 0.5 V. It functions reliably across a junction temperature range of -65°C to +150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required package and tape-and-reel specifications. Ensure compliance with RoHS standards and check for any end-of-life notices regarding production status before finalizing procurement plans.
Select this component when designing circuits requiring robust NPN amplification with high current handling. The 80 V collector-emitter rating and 1 A current capacity make it suitable for demanding audio applications. Verify thermal management requirements to ensure the total power dissipation does not exceed limits at elevated case temperatures.
This part belongs to the BCX54...BCX56 series of NPN silicon AF transistors. It serves as the complementary counterpart to the BCX51...BCX53 PNP types. The H6327XTSA1 suffix indicates a specific surface-mount packaging configuration in the SOT-89 format, optimized for automated assembly processes.
Direct replacements include other BCX56 variants such as BCX56-10 or BCX56-16, provided their specific gain banding and voltage ratings align with the circuit design requirements.