SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX5616QTC is an NPN medium power Bipolar Junction Transistor (BJT) manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of 80 V, a continuous collector current (IC) of 1 A, and a peak pulse collector current (ICM) of 2 A. The device operates within a temperature range of -55°C to +150°C. Electrical characteristics include a transition frequency (fT) of 150 MHz at IC = 50mA and VCE = 10V, with a maximum DC current gain (hFE) of 250 at IC = 150mA. Power dissipation reaches 1 W on a 15mm x 15mm copper pad. It is housed in a SOT-89 package.
Verify the exact ordering suffix 'TC' against the manufacturer's official documentation to confirm the reel size and packing quantity specifications. Ensure that the selected component meets all necessary automotive qualification standards required for your specific design implementation.
Select this component when designing circuits that require high reliability in automotive environments. Consider the thermal resistance values associated with different PCB copper areas to ensure adequate heat dissipation. Verify that the required collector current and voltage ratings align with the system's operational limits.
This part belongs to the BCX5616Q series of NPN medium power transistors designed specifically for automotive use. It is complemented by the BCX5316Q PNP type. The series utilizes epitaxial planar technology and is manufactured in IATF16949 certified facilities to meet stringent automotive quality requirements.
BCX5616QTA
The maximum collector-emitter breakdown voltage (BVCEO) is 80 V.
Yes, it is explicitly listed as suitable for AF drivers and output stages.
The transition frequency (fT) is 150 MHz when measured at IC = 50mA and VCE = 10V.