BCX5616QTC

BCX5616QTC

$0.38
  • Description:TRANS NPN 80V 1A SOT-89-3
  • Series:-

SKU:9f8d0b7bd564 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 80V 1A SOT-89-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89-3
  • Grade:Automotive
  • Qualification:AEC-Q101

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BCX5616QTC

Overview

The BCX5616QTC is an NPN medium power Bipolar Junction Transistor (BJT) manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of 80 V, a continuous collector current (IC) of 1 A, and a peak pulse collector current (ICM) of 2 A. The device operates within a temperature range of -55°C to +150°C. Electrical characteristics include a transition frequency (fT) of 150 MHz at IC = 50mA and VCE = 10V, with a maximum DC current gain (hFE) of 250 at IC = 150mA. Power dissipation reaches 1 W on a 15mm x 15mm copper pad. It is housed in a SOT-89 package.

Feature Summary

  • AEC-Q101 qualified for automotive applications requiring specific change control
  • Epitaxial planar die construction for robust performance
  • Low saturation voltage under high current conditions
  • Totally lead-free and fully RoHS compliant

Applications

  • Automotive systems
  • Medium power switching applications
  • Amplification circuits
  • Audio frequency drivers and output stages

Procurement Notes

Verify the exact ordering suffix 'TC' against the manufacturer's official documentation to confirm the reel size and packing quantity specifications. Ensure that the selected component meets all necessary automotive qualification standards required for your specific design implementation.

Selection Notes

Select this component when designing circuits that require high reliability in automotive environments. Consider the thermal resistance values associated with different PCB copper areas to ensure adequate heat dissipation. Verify that the required collector current and voltage ratings align with the system's operational limits.

Part Context

This part belongs to the BCX5616Q series of NPN medium power transistors designed specifically for automotive use. It is complemented by the BCX5316Q PNP type. The series utilizes epitaxial planar technology and is manufactured in IATF16949 certified facilities to meet stringent automotive quality requirements.

Replacement Considerations

BCX5616QTA

FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 80 V.

Is this transistor suitable for audio frequency applications?

Yes, it is explicitly listed as suitable for AF drivers and output stages.

What is the transition frequency of the device?

The transition frequency (fT) is 150 MHz when measured at IC = 50mA and VCE = 10V.

BCX5616QTCBCX5616QTC
$0.38
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