BCX6810H6327XTSA1

Overview

The BCX6810H6327XTSA1 is an NPN silicon audio frequency transistor in a SOT-89 package. It features a collector-emitter voltage of 20 V, continuous collector current of 1 A, and peak current of 2 A. The device offers a DC current gain range of 50 to 160 at IC = 5 mA and VCE = 10 V. Transition frequency is typically 100 MHz. Total power dissipation reaches 3 W with junction temperature up to 150 °C.

Feature Summary

• High collector current capability for robust signal handling
• Low collector-emitter saturation voltage for efficient switching
• High current gain across varying operating conditions
• Qualified according to automotive reliability standards

Applications

• General audio frequency applications
• Automotive electronics systems
• Linear amplifier circuits

Procurement Notes

Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status directly from the manufacturer datasheet before integration into production lines.

Selection Notes

Select this component when designing circuits requiring high current handling and low saturation voltage in a compact surface-mount form factor. Ensure thermal management supports the specified power dissipation limits under maximum ambient conditions.

Part Context

This part belongs to the BCX68 series of NPN silicon AF transistors manufactured by Infineon Technologies. It serves as the NPN counterpart to the complementary BCX69 PNP type within the same product family designed for general audio and linear applications.

Replacement Considerations

BCX6816H6327XTSA1

FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (VCEO) is 20 V.

Is this component suitable for automotive applications?

Yes, the component is qualified according to the AEC-Q101 standard.

What is the typical transition frequency?

The transition frequency (fT) is typically 100 MHz at IC = 100 mA and VCE = 5 V.