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Product Detailed Parameters
- Description：TRANS PNP 20V 1A PG-SOT89
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：20 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：85 @ 500mA, 1V
- Power - Max：3 W
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：PG-SOT89
- Grade：-
- Qualification：-
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Overview
The BCX6910E6327HTSA1 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a PG-SOT23 surface-mount package and designed for audio frequency applications. The device features a maximum collector-emitter voltage of 80 V, a continuous collector current of 1 A, and a power dissipation rating of 500 mW. It exhibits a DC current gain (hFE) of at least 400 when tested at a collector current of 2 mA and a collector-emitter voltage of 5 V. The component supports a maximum operating junction temperature of 150°C.
Feature Summary
- High DC current gain suitable for amplification tasks
- Designed for general-purpose audio frequency operations
- Utilizes a compact surface-mount SOT-23 form factor
Applications
- Audio signal amplification circuits
- General-purpose switching applications
- Low-power amplifier stages
Procurement Notes
Verify the specific datasheet revision and electrical characteristics against official Infineon documentation before integration. Confirm that the PG-SOT23 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified power dissipation limits under actual operating conditions to maintain reliability within the rated temperature range.
Selection Notes
Select this component for designs requiring high current gain in a small surface-mount package. Compare the 80 V breakdown voltage and 1 A current capacity against circuit requirements. Evaluate the 500 mW power dissipation limit relative to expected thermal loads. Consider the 150°C junction temperature capability for high-temperature environments.
Part Context
This part belongs to the BCX69 series of PNP transistors from Infineon Technologies. These devices are engineered for robust performance in audio and low-frequency applications. The E6327 suffix indicates a specific tape-and-reel packaging configuration intended for automated assembly processes.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains identical pinout configurations, voltage ratings, and current capabilities.
