SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX70G is an NPN epitaxial silicon transistor housed in a SOT-23 package. It features a collector-emitter voltage of 45 V and a continuous collector current of 200 mA, with a maximum power dissipation of 350 mW at 25°C. The device provides a DC current gain ranging from 120 to 220 at 2 mA and 60 to 220 at 50 mA. Key electrical characteristics include a transition frequency of 125 MHz, a collector-base breakdown voltage of 45 V, and an emitter-base breakdown voltage of 5 V.
Verify the specific datasheet revision and manufacturer documentation when sourcing this component. Confirm that the part number matches the exact specifications required for your design, particularly regarding the SOT-23 package dimensions and pinout configuration. Ensure compliance with all applicable safety standards and environmental regulations relevant to your region before finalizing procurement decisions.
Select the BCX70G for designs requiring low noise performance and moderate current handling capabilities within a compact surface-mount footprint. Consider its transition frequency and saturation voltages when designing high-speed switching or amplification circuits. Evaluate thermal management requirements based on the 350 mW power dissipation limit to ensure reliable operation under expected load conditions.
The BCX70G belongs to the family of general-purpose NPN transistors designed for versatile electronic applications. Originally developed by Fairchild Semiconductor, it is now distributed by ON Semiconductor following corporate integration. This component serves as a standard solution for basic amplification and switching tasks where small form factor and reliable performance are prioritized.
BCX70KT116
The maximum collector-emitter voltage (VCEO) is rated at 45 V.
The noise figure is specified as 6 dB under test conditions of IC=0.2mA, VCE=5V, f=1KHz, and RS=2KΩ.
The BCX70G is available in the SOT-23 surface-mount package.