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The BCY59-IX PBFREE is an NPN silicon switching transistor manufactured by Central Semiconductor Corp. It features a collector-base voltage of 45 V and a collector-emitter voltage of 40 V, with a maximum continuous collector current of 100 mA. The device dissipates up to 1 W of power at 25°C and operates within a junction temperature range of -65°C to +200°C. Packaged in a TO-18 metal can, it offers a transition frequency of 150 MHz and a DC current gain (hFE) of 120 at 2 mA and 5 V.
Verify the specific suffix IX against official datasheets to confirm exact electrical tolerances, as variations exist within the BCY59 family. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as lead-free designations may vary by production batch. Check for active obsolescence notices, as this component type has faced discontinuation trends from various manufacturers.
Select this component when a hermetically sealed metal package is required for high-temperature environments exceeding standard plastic limits. Ensure the circuit design accommodates the 40 V collector-emitter breakdown voltage and 100 mA current limit. Verify that the TO-18 through-hole footprint matches the PCB layout constraints.
This part belongs to the BCY59 series of NPN switching transistors produced by Central Semiconductor. It serves as a complementary counterpart to the BCY79 series PNP devices. The series is characterized by low voltage ratings and moderate current handling capabilities, suitable for discrete logic and analog switching tasks.
Officially documented substitutes include the BCY59-VII PBFREE and BCY59-VIII PBFREE from Central Semiconductor. Cross-manufacturer equivalents such as the Philips/NXP BCY59 are also recognized.