BCY78-IX PBFREE

BCY78-IX PBFREE

$0.76
  • Description:32V 100MA 340MW TH TRANSISTOR-SM
  • Series:BCY78

SKU:ab665d725382 Category: Brand:

  
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Product Detailed Parameters

  • Description:32V 100MA 340MW TH TRANSISTOR-SM
  • Series:BCY78
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 2.5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 2mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:100MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18
  • Grade:-
  • Qualification:-

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BCY78-IX PBFREE

Overview

The BCY78-IX PBFREE is a small signal bipolar transistor manufactured by Central Semiconductor Corp. It is classified as a single-element PNP silicon device designed for general-purpose amplification and switching applications. The component features a maximum collector-emitter voltage (V(BR)CEO) of 32 V and utilizes an uncased chip package designated as DIE-2. This surface-mountable die configuration allows for integration into compact circuit designs requiring reliable PNP transistor performance within specified thermal and electrical limits.

Feature Summary

  • Single-element PNP silicon construction
  • Surface-mountable uncased chip format
  • General-purpose amplification capability

Applications

  • General-purpose amplification circuits
  • Electronic switching applications
  • Compact integrated circuit modules

Procurement Notes

Verify the specific IX suffix designation against the manufacturer's current datasheet to confirm exact binning or testing parameters. Ensure that the receiving facility has appropriate handling procedures for uncased semiconductor dies, as standard packaging protections are not present. Confirm RoHS compliance status directly with the supplier documentation prior to final procurement authorization.

Selection Notes

Select this component when a PNP silicon transistor with a 32 V collector-emitter breakdown voltage is required in a bare die form factor. The DIE-2 package necessitates careful substrate selection and mounting techniques suitable for uncased chips. Evaluate thermal management requirements for the specific application environment to ensure operation remains within safe junction temperature limits during continuous duty cycles.

Part Context

This part belongs to the broader category of small signal bipolar transistors produced by Central Semiconductor. These devices are typically utilized in low-power analog and digital circuits where space constraints favor bare die implementations over traditional leaded packages. The product line emphasizes reliability in specialized electronic assemblies requiring direct bonding or flip-chip integration methods.

Replacement Considerations

Consult official substitution guides for equivalent PNP dies with matching voltage ratings and package dimensions. Verify pinout compatibility and thermal characteristics before implementing any alternative components in existing designs.

BCY78-IX PBFREEBCY78-IX PBFREE
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