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The BD135G is a plastic medium-power silicon NPN transistor from onsemi, designed for audio amplifiers and drivers in complementary or quasi-complementary circuits. It features a collector-emitter voltage (VCEO) of 45 Vdc and a collector-base voltage (VCBO) of 45 Vdc. The device supports a maximum collector current (IC) of 1.5 Adc and dissipates up to 12.5 W at a case temperature of 25°C. Operating junction temperatures range from -55°C to +150°C. The component utilizes a TO-225 package with a thermal resistance of 10 °C/W junction-to-case.
Verify the specific part number suffix against official documentation to confirm package type and compliance status. Confirm availability status as discontinued devices may require alternative sourcing strategies. Ensure compatibility with existing thermal management designs given the specified power dissipation limits.
Select this component for low-voltage, medium-power switching or linear applications requiring high DC current gain. Evaluate thermal constraints carefully, as power dissipation drops significantly above 25°C ambient temperature. Verify that the 45 V rating aligns with the maximum circuit voltages to prevent breakdown.
This component belongs to the BD13x series of plastic medium-power silicon NPN transistors manufactured by onsemi. The series includes variants with different voltage ratings, such as the BD137G and BD139G. These transistors are engineered for robust performance in audio and driver stages.
Consult onsemi representatives for information regarding active alternatives, as these devices are not recommended for new design.