BD13616STU

Overview

The BD13616STU is a PNP epitaxial silicon transistor from the BD136 series, manufactured by onsemi. It features a collector-base voltage of -45 V and a collector-emitter voltage of -45 V. The device supports a continuous DC collector current of -1.5 A and a pulsed collector current of -3.0 A. Maximum collector dissipation is rated at 12.5 W at a case temperature of 25°C and 1.25 W at an ambient temperature of 25°C. The junction temperature limit is 150°C. The component utilizes a TO-126 package with pin configurations for emitter, collector, and base.

Feature Summary

• Epitaxial planar construction designed for medium power linear and switching applications
• Complementary pairing available with NPN types BD135, BD137, and BD139
• Pre-selected DC current gain classifications (hFE) for consistent performance in audio amplifiers and drivers

Applications

• Audio amplifiers utilizing complementary or quasi-complementary circuits
• Driver circuits requiring medium power handling
• Linear and switching applications within specified thermal limits

Procurement Notes

Verify the specific hFE classification suffix '16' against the manufacturer's datasheet to confirm the gain range falls within the 63 to 160 specification. Ensure the ordering code matches the TO-126 package style. Confirm RoHS compliance status if required for the target assembly process. Cross-reference the part number with official distributor catalogs to validate availability and authenticity before finalizing procurement orders.

Selection Notes

Select this component when a PNP transistor with a 45 V breakdown voltage and 1.5 A continuous current rating is required. Consider the TO-126 package for through-hole mounting requirements. Evaluate thermal management needs based on the 1.25 W dissipation limit at ambient conditions versus 12.5 W at case temperatures. Ensure compatibility with complementary NPN devices like the BD135 or BD139 for push-pull amplifier topologies.

Part Context

This component belongs to the BD136/138/140 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor International. The series is characterized by its use in medium power applications and its role as a complement to the BD135/NPN series. The BD136 variant specifically denotes the -45 V rating, distinguishing it from the higher voltage BD138 (-60 V) and BD140 (-80 V) counterparts within the same product line.

Replacement Considerations

Direct substitutes include the BD136 from other manufacturers offering identical electrical ratings and TO-126 packaging. Verify that replacement parts maintain the same hFE classification range (63-160) and thermal characteristics. Ensure the alternative component is compatible with the intended circuit topology, particularly regarding complementary NPN pairings.