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The BD136G is a silicon PNP epitaxial planar transistor manufactured by onsemi, housed in the TO-225AA (TO-126-3) plastic package. Designed for audio amplifiers and drivers using complementary or quasi-complementary circuits, it features high DC current gain. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 45 Vdc, a collector current (Ic) of 1.5 Adc, and total device power dissipation of 1.25 W at ambient temperature or 12.5 W at case temperature. The operating and storage junction temperature range spans from -55°C to +150°C.
Verify the specific package variant, as BD136G typically denotes the TO-225AA form factor while BD13616S refers to TO-126-3. Confirm RoHS compliance status through official manufacturer documentation, as environmental declarations may vary by production batch. Ensure the selected component matches the required thermal dissipation capabilities for the intended application environment.
Select the BD136G when a PNP transistor with 45 V collector-emitter voltage and 1.5 A continuous current capability is required. It serves as the complementary pair to NPN types such as the BD135 and BD139. Consider the thermal management requirements, as power dissipation drops significantly above 25°C ambient temperature. Verify that the package style aligns with the PCB layout constraints.
The BD136G belongs to the BD13x series of medium-power PNP transistors produced by onsemi. This family includes variants like the BD138G and BD140G, which offer higher voltage ratings. These components are widely utilized in analog electronics where reliable switching and linear amplification are necessary. The series is designed to provide matched characteristics when paired with their NPN counterparts for balanced circuit performance.
BD13616STU is listed as a direct substitute by onsemi. Other compatible parts within the same product family include BD138G and BD140G, though these feature different voltage ratings. Always verify pinout compatibility and thermal specifications before substituting.