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The BD13710S is a 1.5 A, 60 V NPN power bipolar junction transistor manufactured by onsemi. It belongs to the BD137 series of general-purpose transistors featuring low saturation voltage characteristics. The device is housed in a TO-126-3 package and utilizes epitaxial silicon construction. It serves as a robust discrete component for switching and amplification applications requiring moderate current handling capabilities within standard voltage limits.
Verify the specific suffix 'S' against official datasheets to confirm package details and marking codes. Ensure compliance with RoHS directives if required. Confirm availability through authorized distributors only. Check for any recent product lifecycle changes or obsolescence notices directly from the manufacturer before finalizing procurement plans.
Select this component when a 1.5 A NPN transistor with a 60 V rating is required. Consider the TO-126-3 package for thermal management needs. Compare electrical characteristics such as hFE and saturation voltage against alternative BJT options to ensure compatibility with the specific circuit requirements and load conditions.
This part is part of the BD137 series, which includes variants like the BD136 (PNP) and BD137 (NPN). These transistors are designed for general-purpose use, offering a balance of current handling and voltage ratings. The series is widely used in consumer electronics and industrial equipment for basic power control functions.
Direct substitutes include other 1.5 A, 60 V NPN transistors in similar packages. Verify pinout compatibility and electrical parameters such as gain and saturation voltage. Cross-reference with manufacturer replacement guides for approved alternatives.