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The BD13710STU is an NPN silicon planar epitaxial transistor manufactured by onsemi. It belongs to the BD137 series, featuring a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 1.5A. The device is housed in a TO-225AA (TO-92) plastic package with three leads. Key electrical characteristics include a maximum DC current gain (hFE) of 63 and a transition frequency (fT) of 250 MHz. The component supports a maximum junction temperature of 150°C and has a total power dissipation capability of 13W.
Verify the manufacturer marking matches onsemi specifications. Confirm the package type is TO-225AA. Check for RoHS compliance status as older variants may differ. Ensure the part number suffix 'STU' corresponds to the correct tape and reel or bulk packaging format specified in the official datasheet.
Select this component when an NPN transistor with 60V V(BR)CEO and 1.5A I(C) is required in a TO-92 package. Compare hFE ranges and fT against circuit requirements. Consider thermal management if operating near the 13W power dissipation limit. Verify pinout compatibility with existing PCB layouts.
The BD13710STU is part of the BD137 family of NPN transistors from onsemi. This series is widely used in consumer electronics and industrial equipment. The '10' designation typically indicates specific binning for current gain. The STU suffix denotes the specific packaging and trailing zero configuration for the TO-225AA case.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 60V.
Yes, it has a transition frequency (fT) of 250 MHz, making it suitable for moderate-speed switching and RF applications.
It is housed in a TO-225AA plastic package, commonly known as TO-92.