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The BD138 is a PNP silicon epitaxial planar transistor housed in the SOT-32 (TO-126) plastic package. It features a collector-base voltage of -60 V, a collector-emitter voltage of -60 V, and a maximum continuous collector current of -1.5 A. The device supports a peak collector current of -3 A with a total power dissipation of 1.25 W at ambient temperatures up to 25 °C. DC current gain ranges from 25 to 250 depending on operating conditions.
Verify the specific manufacturer datasheet to confirm absolute maximum ratings and thermal resistance values. Ensure the selected component matches the required SOT-32 package dimensions and pinout configuration for proper integration into the target circuit design.
Select this component when a PNP transistor with a 60 V rating and 1.5 A current capacity is required. Consider the complementary BD137 NPN transistor for matched pairs in push-pull configurations. Verify thermal management requirements based on the specified power dissipation limits.
This part belongs to a series of medium-power linear and switching transistors designed for general-purpose amplification. It serves as the PNP counterpart to the BD137 NPN transistor within the same product family, sharing similar mechanical packaging and operational characteristics.
BD137
The maximum collector-emitter voltage (VCEO) is -60 V.
Yes, the BD138 is the complementary PNP type to the BD137 NPN transistor.
The BD138 is mounted in the Jedec SOT-32 plastic package.