BD1406S

Overview

The BD1406S is a PNP epitaxial silicon transistor manufactured by onsemi, designed for general-purpose applications and low saturation voltage requirements. It features a maximum collector current of 1.5 A and a collector-emitter breakdown voltage (VCEO) of 80 V. The device operates in a TO-126-3 through-hole package with a power dissipation rating of 12.5 W at case temperatures of 25°C. Key electrical parameters include a collector-base voltage (VCBO) of 80 V, an emitter-base voltage (VEBO) of 5 V, and a collector-emitter saturation voltage of 500 mV. The DC current gain (hFE) ranges from a minimum of 40 to a maximum of 250. The component supports a maximum operating junction temperature of +150°C.

Feature Summary

• High DC current gain ranging from 40 to 250 for effective signal amplification
• Low collector-emitter saturation voltage of 500 mV for efficient switching
• Robust 1.5 A continuous collector current capability
• RoHS compliant lead-free and halogen-free design

Applications

• Audio amplifier circuits
• Driver stages in complementary or quasi-complementary configurations
• General-purpose switching applications requiring high current handling

Procurement Notes

Verify the specific suffix 'S' against official onsemi documentation to confirm package type and marking specifications. Ensure compatibility with RoHS standards if required by the end application. Cross-reference the part number alias BD14016STU_NL if sourcing from distributors using alternate nomenclature. Confirm availability status as distribution channels may vary regionally.

Selection Notes

Select this component when a PNP transistor with 80 V voltage rating and 1.5 A current capacity is required. The TO-126-3 package suits through-hole mounting for power dissipation up to 12.5 W. Consider the hFE range of 40-250 for circuit biasing stability. This part complements NPN counterparts like the BD139 series for push-pull designs.

Part Context

The BD1406S belongs to the BD140 series of medium-power PNP transistors produced by onsemi. This series includes variants such as BD136G, BD138G, and BD140G, differentiated primarily by voltage ratings. The BD140 series is engineered for audio and driver applications, offering high gain and environmental compliance. It serves as a standard solution for general-purpose bipolar junction transistor needs in consumer and industrial electronics.

Replacement Considerations

The BD14016STU is listed as a part number alias for this component family. Verify pinout and thermal characteristics before substitution. Complementary NPN transistors in the BD13x series are suitable for paired circuit designs.