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The onsemi BD1406STU is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of -45 V and a continuous collector current rating of 3 A. The device is housed in a TO-126 (TO-92AB) through-hole package, providing robust thermal performance with a maximum power dissipation of 30 W. It operates within a junction temperature range up to 150°C and includes a transition frequency of 3 MHz, suitable for medium-speed circuit designs.
Verify the specific suffix 'STU' against the manufacturer's official datasheet to confirm pinout orientation and marking codes, as variations exist within the BD1406 family. Ensure the procurement source provides traceable documentation confirming the component meets RoHS compliance standards. Cross-reference the part number with authorized distributors to avoid counterfeit components, especially given the age of the product line.
Select this component when a PNP transistor with high current capacity and moderate speed is required in a through-hole form factor. Compare the -45 V breakdown voltage against the system's supply rails to ensure adequate headroom. Evaluate the thermal resistance characteristics of the TO-126 package against the expected heat dissipation in the target application to determine if additional heatsinking is necessary for sustained operation.
The BD1406 series belongs to onsemi's lineup of general-purpose power transistors. These devices are commonly used in industrial and consumer electronics where reliable switching and amplification are needed. The BD1406STU specifically denotes the PNP variant packaged in TO-126, offering a balance between power handling and ease of integration into standard printed circuit board layouts.
Public confirmed substitute part numbers: BD1406G, BD1406L.