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The BD17910STU is an NPN epitaxial silicon transistor manufactured by Fairchild Semiconductor, housed in a TO-126-3 through-hole package. It features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 3A. The device has a transition frequency of 3MHz and a maximum power dissipation of 30W. It serves as the direct parametric equivalent for the obsolete BD179 component.
Verify that the supplier provides the complete part number BD17910STU rather than the generic BD179 designation. Confirm the package type is TO-126-3. Check for RoHS compliance documentation if required. Ensure the source is authorized to prevent counterfeit components.
Select this component when replacing discontinued BD179 units in existing hardware. It maintains identical electrical characteristics including 80V rating and 3A current capacity. Suitable for applications requiring robust NPN switching or linear amplification in standard through-hole layouts.
This part belongs to the BD175/177/179 series of NPN transistors. It is the modern production version of the legacy BD179, which was previously manufactured by Fairchild Semiconductor before becoming obsolete. The 10 suffix typically denotes specific gain binning within the series.