BD235STU

BD235STU

  • Description:TRANS NPN 60V 2A TO-126-3
  • Series:-

SKU:20f22a96fd69 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 60V 2A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 1A, 2V
  • Power - Max:25 W
  • Frequency - Transition:3MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3
  • Grade:-
  • Qualification:-

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BD235STU

Overview

The BD235STU is a single NPN epitaxial planar silicon power transistor manufactured by onsemi. It utilizes a 'Base Island' layout to achieve high current gain and low saturation voltage. The device is housed in a TO-126 (TO-261AA) three-lead through-hole package designed for efficient thermal dissipation. Key electrical ratings include a maximum collector-emitter voltage of 45 V, a maximum collector-base voltage of 45 V, and a continuous collector current capacity of 1.5 A. The component supports a maximum power dissipation of 12.5 W and operates at junction temperatures up to +150°C.

Feature Summary

  • High DC current gain performance resulting from the specialized Base Island planar technology.
  • Low collector-emitter saturation voltage to minimize conduction losses during switching or amplification.
  • Robust thermal management capabilities enabled by the metal-tabbed TO-126 through-hole package.

Applications

  • General-purpose linear and switching amplifier circuits
  • Power supply regulation stages
  • Driver applications requiring moderate current handling

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout orientation and thermal pad configuration. Ensure the procurement channel provides traceable documentation confirming RoHS compliance status. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and avoid counterfeit components.

Selection Notes

Select this component when a standard NPN power transistor is required for moderate current loads up to 1.5 A. The TO-126 package is suitable for board-level mounting where through-hole reliability is preferred over surface mount alternatives. Consider the 45 V voltage rating to ensure adequate headroom for the target circuit's operating conditions.

Part Context

This device belongs to the BD23x series of complementary silicon power transistors. It serves as the NPN counterpart to the BD236 PNP type. The series is characterized by its use of planar technology optimized for high gain and low saturation characteristics, making it a standard choice for general-purpose power switching and amplification tasks.

Replacement Considerations

The BD236STU is the direct PNP complement within the same family. Other generic NPN transistors in the TO-126 package may serve as substitutes if their voltage and current ratings meet or exceed the original specifications.

BD235STUBD235STU

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