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The BD235STU is a single NPN epitaxial planar silicon power transistor manufactured by onsemi. It utilizes a 'Base Island' layout to achieve high current gain and low saturation voltage. The device is housed in a TO-126 (TO-261AA) three-lead through-hole package designed for efficient thermal dissipation. Key electrical ratings include a maximum collector-emitter voltage of 45 V, a maximum collector-base voltage of 45 V, and a continuous collector current capacity of 1.5 A. The component supports a maximum power dissipation of 12.5 W and operates at junction temperatures up to +150°C.
Verify the specific suffix against official datasheets to confirm pinout orientation and thermal pad configuration. Ensure the procurement channel provides traceable documentation confirming RoHS compliance status. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and avoid counterfeit components.
Select this component when a standard NPN power transistor is required for moderate current loads up to 1.5 A. The TO-126 package is suitable for board-level mounting where through-hole reliability is preferred over surface mount alternatives. Consider the 45 V voltage rating to ensure adequate headroom for the target circuit's operating conditions.
This device belongs to the BD23x series of complementary silicon power transistors. It serves as the NPN counterpart to the BD236 PNP type. The series is characterized by its use of planar technology optimized for high gain and low saturation characteristics, making it a standard choice for general-purpose power switching and amplification tasks.
The BD236STU is the direct PNP complement within the same family. Other generic NPN transistors in the TO-126 package may serve as substitutes if their voltage and current ratings meet or exceed the original specifications.