ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 60V 2A TO-220
- Series：-
- Mfr：Bourns Inc.
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 200mA, 1A
- Current - Collector Cutoff (Max)：300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 1A, 4V
- Power - Max：2 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
Download product information
Overview
The BD239A-S is an NPN silicon power transistor manufactured by Bourns Inc., housed in a TO-220-3 package. It features a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 2A. The device has a maximum power dissipation capacity of 30W. Key electrical characteristics include a collector-emitter saturation voltage of 700mV measured at a base current of 200mA and a collector current of 1A. This component is designed for general-purpose switching and amplification applications within its specified voltage and current limits.
Feature Summary
- NPN silicon construction for reliable power switching
- TO-220-3 through-hole mounting configuration
- RoHS compliant manufacturing process
Applications
- General-purpose power switching circuits
- Amplifier stages requiring moderate current handling
- Industrial control systems
Procurement Notes
The BD239A-S is officially classified as obsolete and is no longer manufactured by Bourns Inc. Procurement efforts should focus on verifying the authenticity of remaining stock from authorized distributors or secondary market suppliers. Buyers must confirm that components are new, unopened, and free from physical damage to ensure reliability. Due to the discontinued status, lead times may vary significantly, and long-term supply continuity cannot be guaranteed without alternative sourcing strategies.
Selection Notes
Engineers designing new systems should avoid selecting this obsolete part number. Instead, they should evaluate active alternatives with comparable specifications, such as the 2N6292G. Selection criteria must prioritize matching the 60V breakdown voltage, 2A current rating, and TO-220-3 package form factor. Verify that substitute devices meet the required thermal dissipation capabilities and saturation voltage requirements for the specific application load.
Part Context
This component belongs to the BD239 series of NPN silicon power transistors produced by Bourns Inc. The series includes variants such as the BD239, BD239A, BD239B, and BD239C. These transistors are engineered for medium-power applications, offering robust performance in standard industrial and commercial electronics environments where reliable switching and amplification are required.
Replacement Considerations
The 2N6292G by onsemi is documented as a similar available substitute. Engineers should verify pinout compatibility and electrical parameter alignment before implementation.
