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The BD239BTU is an NPN epitaxial silicon power transistor manufactured by onsemi. It features a maximum collector current of 2 A and a collector-emitter voltage rating of 80 V. The device utilizes a TO-220AB package with three pins, designed for high thermal performance. It supports a maximum operating junction temperature of 150 °C and offers a minimum DC current gain (hFE) of 15.
Verify the specific manufacturer origin, as the BD239BTU designation appears in records associated with both onsemi and Fairchild Semiconductor. Confirm lead times and compliance status directly with authorized distributors, as supply chain data varies by source. Ensure the component matches the required TO-220AB physical dimensions and pinout configuration for your design.
Select this component when an NPN power transistor with 80 V breakdown and 2 A continuous current capacity is required. The TO-220AB package facilitates direct mounting to heatsinks. Consider the complementary BD240 series if a matched PNP pair is needed for push-pull configurations. Verify that the minimum hFE of 15 meets the circuit's drive requirements.
The BD239 series comprises NPN power transistors often used in conjunction with the BD240 PNP series. These devices are engineered for linear and switching operations in medium-power environments. The BTU suffix typically denotes the TO-220AB plastic package variant, distinguishing it from other form factors within the broader BD239 family.
The BD239B is a documented equivalent part number offering identical electrical specifications and TO-220 packaging. Verify pin compatibility and thermal characteristics before substitution.