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The BD241A-A is an obsolete NPN silicon power transistor manufactured using Planar technology with a Base Island layout. It offers high gain and low saturation voltage, qualified for automotive applications. Key electrical ratings include a collector-emitter voltage of 60 V (VCEO) and 70 V (VCER), a continuous collector current of 3 A, and peak current of 5 A. Total dissipation is 40 W at 25°C case temperature. The device features a DC current gain (hFE) ranging from 10 to 25 depending on operating conditions.
Verify the obsolete status of this component before initiating any procurement process. Confirm that the specific ordering suffix matches the required automotive qualification and package type. Ensure that design-in activities account for end-of-life management strategies given the product's discontinued status.
Select this component only if automotive qualification is explicitly required alongside the specified voltage and current capabilities. Evaluate the thermal requirements carefully, as total dissipation is rated at 40 W only when the case temperature is maintained at 25°C. Consider the limited hFE range when designing biasing networks for linear amplifier applications.
This part belongs to the BD241 series of complementary silicon power transistors. The PNP complement types are BD242A and BD242C. These devices are designed for general-purpose power switching and amplification tasks within the broader portfolio of STMicroelectronics' bipolar power transistors.
Public confirmed substitute part numbers are not available in the provided documentation. As the product is marked obsolete, alternative sourcing or redesign with currently active components is necessary.