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The BD241CG is a single NPN silicon power transistor manufactured by onsemi using planar technology with a base island layout. It is housed in a TO-220-3 through-hole package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 100 V, a continuous collector current of 3 A, and a power dissipation rating of 40 W. The device features a minimum DC current gain (hFE) of 25 and a transition frequency (fT) of 3 MHz. Operating temperatures range from -65 °C to +150 °C.
Verify the manufacturer part number BD241CG against official onsemi documentation to ensure authenticity. Confirm RoHS compliance status via the specific datasheet or compliance report linked to this part number. Check for any recent product change notifications that may affect pinout or material composition before finalizing procurement.
Select this component when a 100 V NPN power transistor with 3 A continuous current capability is required. The TO-220-3 package provides adequate thermal management for 40 W dissipation with appropriate heatsinking. Ensure the application operates within the specified temperature range of -65 °C to +150 °C and accounts for the 3 MHz bandwidth limitation.
The BD241CG belongs to the BD241C series of complementary silicon power transistors. This series includes PNP counterparts such as the BD242A and BD242C. These devices are designed for general-purpose power amplification and switching, offering high gain and low saturation voltage due to their specific manufacturing process.
Consult official cross-reference data for verified substitutes. Generic equivalents must match the 100 V VCEO, 3 A IC, and TO-220-3 package constraints.