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The BD241E-S is an NPN silicon power transistor manufactured by Bourns Inc. It utilizes planar technology with a base island layout to achieve high gain and low saturation voltage. The device is housed in a TO-220-3 package for through-hole mounting. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 60 V, a maximum DC collector current of 3 A, and a power dissipation capability of 40 W. The component operates within a temperature range of -65 °C to +150 °C and features a minimum DC current gain (hFE) of 25.
Verify the specific suffix 'E-S' against official manufacturer documentation to confirm exact binning or packaging variations. Confirm RoHS compliance status as datasheets may vary by production batch. Ensure the TO-220-3 package dimensions match the target PCB footprint requirements before finalizing procurement decisions.
Select this component for applications requiring robust NPN switching or amplification with moderate voltage handling. The 40 W power dissipation rating necessitates adequate thermal management solutions. Verify that the 60 V collector-emitter voltage meets the circuit's peak operating conditions. Consider the 3 A continuous current limit when designing load paths.
This part belongs to the BD241 series of power transistors. The PNP complement for this device is typically the BD242 series. These components are designed for general-purpose power control applications where high reliability and consistent gain characteristics are required. The series is widely used in consumer and industrial electronics.
Public confirmed substitute part numbers are not available in the provided source material.