BD243C

Overview

The BD243C is a silicon epitaxial-base NPN power transistor housed in a TO-220 plastic package. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 6 A, with a peak current capability of 10 A. The device supports a total dissipation of 65 W at a case temperature of 25°C. Its complementary PNP counterpart is the BD244C.

Feature Summary

• Designed for medium power linear and switching applications
• Utilizes silicon epitaxial-base construction
• Mounted in a standard JEDEC TO-220 plastic package

Applications

• Medium power linear circuits
• Switching applications

Procurement Notes

Verify the specific suffix 'C' to confirm the 100 V collector-emitter voltage rating, distinguishing it from the BD243B variant which has an 80 V rating. Ensure the component matches the TO-220 package dimensions and pinout configuration required by the design. Confirm that the application environment remains within the specified junction temperature limits.

Selection Notes

Select this component when a high-voltage NPN power transistor is required for linear or switching tasks. The BD243C offers a higher voltage rating than the BD243B variant. Consider the thermal resistance values for heat sink design to maintain safe operating temperatures under load conditions.

Part Context

This part belongs to a family of complementary silicon power transistors manufactured by STMicroelectronics. The BD243C serves as the NPN member, paired with the BD244C PNP type. These devices are intended for general-purpose power handling in electronic circuits requiring robust voltage and current capabilities.

Replacement Considerations

The BD243B is a direct substitute if the circuit operates below 80 V collector-emitter voltage. Verify that the lower voltage rating of the B variant does not compromise safety margins in the specific application.