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The BD437TG is a silicon NPN power transistor manufactured by onsemi, belonging to the BD437 series. It features a single configuration housed in a TO-225 package with through-hole mounting. Key electrical parameters include a maximum DC collector current of 4 A and a collector-emitter voltage (VCEO) of 45 V. The device supports a power dissipation of 36 W and operates within a temperature range of -55°C to +150°C. Additional specifications list a collector-base voltage of 45 V, an emitter-base voltage of 5 V, and a gain-bandwidth product of 3 MHz.
Verify the specific suffix 'TG' against official onsemi documentation to confirm exact marking and compliance details. Ensure the component matches the standard BD437 electrical specifications. Confirm RoHS status and material composition declarations prior to integration. Cross-reference datasheet revisions to ensure design compatibility.
Select this component for designs requiring a 4 A NPN transistor with 45 V breakdown voltage. Consider the TO-225 package constraints for thermal management and board space. Evaluate the need for complementary PNP devices like the BD438G for push-pull configurations. Verify that the 36 W power dissipation rating aligns with the system's thermal design capabilities.
This part belongs to the BD437 series of silicon epitaxial-base NPN power transistors. The series includes variants such as BD433, BD435, and BD437, intended for medium power applications. Complementary PNP types are available as BD434, BD436, and BD438. These components are standardized for use in general-purpose power electronics.
The complementary PNP types for the BD437 series are BD434, BD436, and BD438.
While the BD433 variant is specifically noted for car-radio output stages, the BD437 is intended for general medium power linear and switching applications.
The maximum operating temperature for the BD437 series is +150°C.