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The BD442STU is a PNP silicon epitaxial planar transistor manufactured by onsemi, designed for through-hole mounting in TO-126-3 packages. It supports a maximum continuous collector current of 4 A and withstands collector-emitter and collector-base voltages of 80 V, with an emitter-base voltage rating of 5 V. The device features a power dissipation capacity of 36 W and a gain-bandwidth product (fT) of 3 MHz. Operating temperatures range from -65°C to +150°C, with a typical collector-emitter saturation voltage of 800 mV and a minimum DC current gain (hFE) of 40.
Verify component authenticity against official onsemi documentation due to the part's obsolete status. Confirm package integrity and pin alignment for TO-126-3 compatibility. Review datasheet revisions for any historical manufacturing changes. Ensure storage conditions prevent moisture damage prior to soldering. Validate supplier authorization to mitigate counterfeit risks associated with discontinued semiconductor inventory.
Select this component when a PNP configuration with 4 A current capacity and 80 V voltage ratings is required. The TO-126-3 package facilitates through-hole assembly for higher power thermal management compared to surface-mount alternatives. Consider the 3 MHz bandwidth limitation for high-speed applications. Evaluate thermal resistance requirements against the 36 W dissipation rating for heat sink integration.
The BD442 series represents onsemi's lineup of medium-power PNP transistors engineered for general-purpose amplification and switching. The BD442STU variant specifically utilizes the TO-126-3 housing to balance electrical performance with mechanical durability. This family targets industrial and consumer electronics where reliable high-current control is essential.
Public confirmed substitute part numbers are not available in verified sources. Consult onsemi technical support for direct replacements or evaluate equivalent PNP transistors with matching 4 A/80 V specifications.