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The BD645-S is an NPN Darlington transistor manufactured by Bourns Inc. It features a maximum collector current of 8 A and a collector-emitter breakdown voltage of 60 V. The device supports a power dissipation of 62.5 W at a case temperature of 25°C. It exhibits a minimum DC current gain (hFE) of 750 when tested at 3 V and 3 A. These specifications define its electrical limits and operational capabilities.
Verify the part status before procurement as this component may be classified as obsolete in official catalogs. Confirm that the required electrical parameters, specifically the 60 V breakdown and 8 A current ratings, align with the design requirements. Ensure the package type matches the intended PCB layout and thermal management strategy.
Select this component for applications requiring high current gain and substantial power handling capabilities. The Darlington structure offers superior amplification compared to single transistors. Consider thermal derating requirements for free air temperatures exceeding 25°C to maintain safe operating conditions within the specified limits.
This component belongs to the BD645 series of NPN Darlington transistors from Bourns Inc. It is designed for general-purpose high-power applications. The series includes related models such as BD646, BD647, BD649, and BD651, which share similar structural characteristics but may differ in specific electrical ratings or configurations.
Direct substitutes include BD646, BD647, BD649, and BD651. Verify compatibility regarding pinout and specific electrical limits before substitution. Cross-reference datasheets to ensure the alternative part meets the original circuit's voltage and current requirements.