SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BD678G is a plastic medium-power silicon PNP Darlington transistor manufactured by onsemi. It features a monolithic construction and is designed for complementary general-purpose amplifier applications. The device supports a collector-emitter voltage of 60 Vdc, a continuous collector current of 4.0 Adc, and a total device dissipation of 40 W at 25°C case temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 750 at specified currents, a collector-emitter saturation voltage of 2.5 Vdc, and a base-emitter on voltage of 2.5 Vdc. It operates within a junction temperature range of -55 to +150°C.
Verify the specific suffix (e.g., G or AG) against the datasheet to confirm lead-free status and exact voltage ratings. Confirm availability as some variants may be discontinued. Ensure thermal management meets the 40W dissipation requirement at the intended operating temperature. Validate that the TO-225 package style matches the PCB footprint requirements.
Select this component when a PNP Darlington configuration with high current gain is required for power switching or amplification. Compare the 60V rating against system voltage peaks. Consider the thermal resistance of 3.13°C/W for heat sink calculations. Verify compatibility with complementary NPN counterparts like the BD677 if building push-pull stages.
The BD678G belongs to a series of plastic medium-power silicon PNP Darlingtons from onsemi. It is part of a family including BD676, BD680, and BD682, which share similar packaging but differ in voltage ratings. This series is often used in audio and motor control circuits where high current drive capability is needed.
The BD678G is equivalent to the MJE702. Complementary NPN transistors in the same series include the BD677G.