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The BD679G is a plastic medium-power silicon NPN Darlington transistor manufactured by onsemi. It features a monolithic construction with an integrated antiparallel collector-emitter diode. The device supports a maximum collector-emitter voltage of 80 Vdc and a continuous collector current of 4.0 Adc. It offers a minimum DC current gain of 750 at specified test conditions. The component operates within a junction temperature range of -55 to +150 °C and utilizes a TO-225 package.
Verify the specific ordering suffix and revision status before procurement, as datasheets indicate potential discontinuation or updates for certain variants in this series. Confirm RoHS compliance and Pb-Free packaging requirements align with project specifications. Ensure thermal management design accounts for the specified power dissipation derating curves to maintain reliability under operational loads.
Select the BD679G when an 80 V collector-emitter voltage rating and 4 A continuous current capability are required. Consider its high DC current gain for driving loads with minimal base drive current. Evaluate the TO-225 package style against available board space and thermal constraints. Compare against complementary PNP counterparts if designing full bridge or push-pull amplifier stages.
This component belongs to the BD675/BD677/BD679/BD681 series of plastic medium-power silicon NPN Darlingtons. These devices share similar monolithic construction techniques but differ primarily in their voltage ratings, which range from 45 V to 100 V. The series is designed for general-purpose amplification tasks requiring robust current handling capabilities.
The BD679G is equivalent to the MJE 802. Designers may consider the MJE 802 as a direct substitute part number based on official equivalence documentation.