BF 1005SR E6327

BF 1005SR E6327

$0.08
  • Description:RF MOSFET 5V SOT143R
  • Series:-

SKU:17212dbd7929 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET 5V SOT143R
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:800MHz
  • Gain:22dB
  • Voltage - Test:5 V
  • Current Rating (Amps):25mA
  • Noise Figure:1.6dB
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:8 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-143R
  • Supplier Device Package:PG-SOT-143R-3D
  • Configuration:N-Channel

Download product information

BF 1005SR E6327

Overview

The BF1005SR E6327 is a silicon N-channel MOSFET tetrode in an SOT-143R package. It features an integrated biasing network and operates at 5 V. Key electrical parameters include a drain-source voltage of 8 V, continuous drain current of 25 mA, and total power dissipation of 200 mW. At 800 MHz with self-biasing (VDS=5 V, VG2S=4 V), it provides a typical power gain of 22 dB and a noise figure of 1.6 dB. The device has a forward transconductance of 30 mS and supports a gain control range of up to 50 dB.

Feature Summary

  • Integrated biasing network for simplified circuit design
  • Low noise and high gain characteristics suitable for controlled input stages
  • Wide gain control range via Gate 2 voltage adjustment
  • Qualified according to AEC Q101 standards

Applications

  • Low noise, high gain controlled input stages up to 1 GHz
  • RF amplifier circuits requiring integrated biasing
  • Automotive RF applications meeting AEC Q101 requirements

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm the exact package variant and tape-and-reel specifications. Ensure that the component's maximum ratings, particularly the drain-source voltage and power dissipation limits, align with the target application's operational conditions before finalizing procurement.

Selection Notes

Select this component for applications requiring low noise figures and high gain in the sub-GHz frequency range. The integrated biasing network reduces external component count. Consider the 8 V drain-source voltage limit and 200 mW power dissipation capability when designing the thermal management and supply voltage constraints.

Part Context

This part belongs to the BF1005S series of silicon N-channel MOSFET tetrodes manufactured by Infineon Technologies. The 'SR' suffix denotes the SOT-143R surface-mount package variant. These devices are designed specifically for RF applications where low noise and high gain are critical performance metrics.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility regarding pin configuration, operating voltage limits, and RF performance metrics such as noise figure and power gain at the target frequency.

BF 1005SR E6327BF 1005SR E6327
$0.08
Buy Now