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The BF1005SR E6327 is a silicon N-channel MOSFET tetrode in an SOT-143R package. It features an integrated biasing network and operates at 5 V. Key electrical parameters include a drain-source voltage of 8 V, continuous drain current of 25 mA, and total power dissipation of 200 mW. At 800 MHz with self-biasing (VDS=5 V, VG2S=4 V), it provides a typical power gain of 22 dB and a noise figure of 1.6 dB. The device has a forward transconductance of 30 mS and supports a gain control range of up to 50 dB.
Verify the specific ordering suffix against official Infineon documentation to confirm the exact package variant and tape-and-reel specifications. Ensure that the component's maximum ratings, particularly the drain-source voltage and power dissipation limits, align with the target application's operational conditions before finalizing procurement.
Select this component for applications requiring low noise figures and high gain in the sub-GHz frequency range. The integrated biasing network reduces external component count. Consider the 8 V drain-source voltage limit and 200 mW power dissipation capability when designing the thermal management and supply voltage constraints.
This part belongs to the BF1005S series of silicon N-channel MOSFET tetrodes manufactured by Infineon Technologies. The 'SR' suffix denotes the SOT-143R surface-mount package variant. These devices are designed specifically for RF applications where low noise and high gain are critical performance metrics.
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility regarding pin configuration, operating voltage limits, and RF performance metrics such as noise figure and power gain at the target frequency.