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The BF 5020R E6327 is an RF MOSFET transistor manufactured by Infineon Technologies. It is a Silicon N-Channel device housed in an SOT-143 package, designed for surface mount applications. The component features a drain-source breakdown voltage of 8 V and a continuous drain current of 25 mA. It operates within a temperature range of -55 C to +150 C with a power dissipation rating of 200 mW. The gate-source voltage is rated at +6 V. This part is classified as an RF small signal MOSFET and is currently listed as obsolete or end-of-life by the manufacturer.
This component is identified as obsolete or end-of-life by Infineon Technologies. Availability is restricted, and distributors may not stock this item. Verification of current lifecycle status and sourcing from authorized channels is essential before design finalization. Alternative parts should be considered for new production runs.
Select this component only if legacy compatibility is required due to its obsolete status. Verify that the 8 V drain-source voltage and 25 mA current ratings meet circuit requirements. Ensure the SOT-143 package fits the PCB layout constraints. Check for RoHS compliance details in official documentation.
The BF 5020 series comprises RF MOSFET transistors intended for high-frequency applications. The 'E6327' suffix typically denotes specific tape and reel packaging configurations used by manufacturers like Infineon. These devices are part of Infineon's broader portfolio of discrete semiconductor components for radio frequency systems.
No official substitute part numbers are publicly confirmed for the BF 5020R E6327. Engineers should evaluate other RF MOSFETs with similar 8 V Vds, 25 mA Id, and SOT-143 packaging specifications. Cross-compatibility must be verified against datasheet parameters rather than assumed based on package type alone.