SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BF 5030R E6327 is a silicon N-channel MOSFET tetrode in the SOT143R surface-mount package. It operates with a maximum drain-source voltage of 8 V and continuous drain current of 25 mA. The device provides high forward transconductance (41 mS) and low noise figure (1.3 dB at 800 MHz). It supports AGC functionality, offering a gain control range of up to 50 dB. Power dissipation is rated at 200 mW at case temperatures up to 76 °C.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm RoHS compliance and Pb-free status via official documentation. Check for AEC Q101 qualification if automotive reliability is required. Ensure handling precautions are followed due to ESD sensitivity.
Select this component for applications requiring low-noise RF performance in the UHF/VHF bands. Verify that the 8 V drain-source voltage and 200 mW power dissipation limits meet circuit requirements. Consider the SOT143R package dimensions for PCB layout compatibility.
This part belongs to the BF5030 series of silicon N-channel MOSFET tetrodes. Variants include the BF5030 in SOT143 and BF5030W in SOT343 packages. All variants share similar electrical characteristics but differ in physical packaging and thermal resistance specifications.
Direct substitutes within the same series include BF5030 (SOT143) and BF5030W (SOT343). Verify pinout compatibility as pin assignments differ between SOT143 and SOT343 packages. Cross-compatibility with other RF MOSFETs requires careful evaluation of noise figure, gain, and AGC range specifications.
The maximum drain-source voltage (VDS) is rated at 8 V.
Yes, the BF 5030R is designed with an AGC function, providing a gain control range of up to 50 dB.
The typical noise figure is 1.3 dB when operating at VDS = 3 V, ID = 10 mA, VG2S = 3 V, and f = 800 MHz.