BF1005SE6327HTSA1

Overview

The BF1005SE6327HTSA1 is a silicon N-channel MOSFET tetrode designed for low noise and high gain applications in controlled input stages up to 1 GHz. It features an integrated biasing network and operates at a voltage of 5 V. The device is qualified according to AEC-Q101 standards and comes in a Pb-free RoHS compliant package. Key electrical parameters include a drain-source breakdown voltage of 12 V, continuous drain current of 25 mA, and total power dissipation of 200 mW. At 800 MHz, it provides a typical power gain of 22 dB with a noise figure of 1.6 dB.

Feature Summary

• Integrated biasing network simplifies circuit design
• Optimized for low noise and high gain performance
• Capable of operation in controlled input stages up to 1 GHz
• Qualified for automotive applications per AEC-Q101

Applications

• Low noise amplifier stages
• High gain controlled input circuits
• RF front-end modules operating up to 1 GHz

Procurement Notes

Verify the component against the official Infineon datasheet to confirm pinout configuration and marking codes specific to the SOT143 or SOT143R package variants. Ensure that the ordering suffix matches the required reel quantity and packaging type. Cross-reference the AEC-Q101 qualification status with project requirements before finalizing procurement.

Selection Notes

Select this component when designing RF circuits requiring high gain and low noise figures around 800 MHz. Consider the 5 V operating voltage and integrated biasing network as primary advantages over discrete solutions. Evaluate thermal constraints carefully, as the maximum power dissipation is limited to 200 mW, which may require adequate heat sinking or PCB layout optimization.

Part Context

This part belongs to the BF1005S series of silicon N-channel MOSFET tetrodes manufactured by Infineon Technologies. The series is specifically engineered for RF applications where signal integrity and amplification are critical. The E6327HTSA1 suffix indicates specific packaging and handling characteristics consistent with Infineon's standard distribution channels.

Replacement Considerations

No direct public substitutes are listed in the provided documentation. When evaluating alternatives, ensure compatibility with the 5 V supply, 25 mA current limit, and SOT143/SOT143R footprint. Verify that replacement devices meet the same AEC-Q101 automotive qualification and offer comparable noise figure and gain specifications at 800 MHz.

FAQ

What is the maximum operating frequency for the BF1005SE6327HTSA1?

The device is designed for controlled input stages up to 1 GHz.

Does the BF1005SE6327HTSA1 require external biasing components?

No, it features an integrated biasing network, simplifying the circuit design.

What is the typical power gain at 800 MHz?

The typical power gain is 22 dB at 800 MHz under self-biased conditions.