BF1005SE6433XT

Overview

The BF1005SE6433XT is a silicon N-channel MOSFET tetrode designed for low noise and high gain applications in controlled input stages up to 1 GHz. It operates at a voltage of 5 V and features an integrated biasing network. The device is qualified according to AEC Q101 standards and comes in a Pb-free SOT143 package. Key electrical parameters include a drain-source breakdown voltage of 12 V, continuous drain current of 25 mA, and total power dissipation of 200 mW. At 800 MHz, it provides a typical power gain of 22 dB with a noise figure of 1.6 dB.

Feature Summary

• Integrated biasing network simplifies circuit design
• Optimized for low noise and high gain performance
• Capable of operation in controlled input stages up to 1 GHz
• AEC Q101 qualified for automotive reliability

Applications

• Low noise amplifier (LNA) input stages
• High gain controlled RF amplifiers
• Automotive radio frequency circuits

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and check for any regional distribution restrictions before finalizing procurement plans.

Selection Notes

Select this component when designing RF front-ends requiring integrated biasing and high linearity. Ensure the operating frequency remains within the 1 GHz limit and that the 5 V supply voltage aligns with system requirements. Consider thermal management for power dissipation limits.

Part Context

This part belongs to the BF1005S series of silicon N-channel MOSFET tetrodes from Infineon Technologies. The series is engineered specifically for RF applications demanding high gain and low noise figures in compact surface-mount packages.

Replacement Considerations

No direct public substitutes are listed. Evaluate alternative RF MOSFET tetrodes based on matching pin configurations, gain characteristics, and noise figures. Verify compatibility with existing PCB layouts and biasing networks.