BF1009SRE6327HTSA1

Overview

The BF1009SRE6327HTSA1 is a silicon N-channel MOSFET tetrode designed for low noise and high gain applications in controlled input stages up to 1 GHz. It features an integrated biasing network and operates at a voltage of 9 V. The device is housed in a surface-mount SOT-143R package with four pins, including Gate 1, Gate 2, Source, and Drain connections. Key electrical characteristics include a drain-source breakdown voltage of 12 V, a continuous drain current of 25 mA, and a total power dissipation of 200 mW. At 800 MHz, it provides a typical power gain of 22 dB and a noise figure of 1.4 dB.

Feature Summary

• Integrated biasing network simplifies circuit design
• Optimized for low noise and high gain performance
• Suitable for controlled input stages up to 1 GHz
• Qualified according to AEC-Q101 standards

Applications

• Low noise amplifier (LNA) input stages
• High gain RF amplification circuits
• Controlled input stage designs up to 1 GHz

Procurement Notes

Verify the specific suffix RE6327HTSA1 against official Infineon documentation to confirm packaging details and RoHS compliance status. Ensure that the ordering information matches the required SOT-143R variant. Confirm availability through authorized distributors as stock levels fluctuate. Cross-reference the datasheet revision date to ensure the latest technical specifications are applied during procurement.

Selection Notes

Select this component when designing RF circuits requiring a low-noise, high-gain N-channel MOSFET tetrode. The integrated biasing network reduces external component count. Verify that the operating frequency remains within the 1 GHz limit and that the 9 V supply voltage aligns with system requirements. Consider the thermal resistance and power dissipation limits for proper heat management in the final assembly.

Part Context

This part belongs to the BF1009S series of silicon N-channel MOSFET tetrodes manufactured by Infineon Technologies. The series is engineered for RF applications where low noise and high gain are critical. The BF1009SRE6327HTSA1 specifically denotes the SOT-143R package variant with tape-and-reel packaging. It shares core electrical characteristics with other BF1009S variants but differs in physical packaging and handling specifications.

Replacement Considerations

No direct public substitutes are listed in the provided documentation. When evaluating alternatives, compare key parameters such as drain-source voltage, continuous drain current, power gain, and noise figure. Ensure the replacement device supports similar RF frequencies and has compatible pin configurations or requires schematic adjustments.

FAQ

What is the maximum operating frequency for the BF1009SRE6327HTSA1?

The device is designed for controlled input stages up to 1 GHz.

Does the BF1009SRE6327HTSA1 require external biasing components?

No, it features an integrated biasing network to simplify circuit design.

What is the typical power gain at 800 MHz?

The typical power gain is 22 dB at 800 MHz with VDS = 9 V and VG2S = 6 V.