BF1100,215

BF1100,215

  • Description:RF MOSFET 9V SOT143B
  • Series:-

SKU:09fda0495ada Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 9V SOT143B
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:800MHz
  • Gain:-
  • Voltage - Test:9 V
  • Current Rating (Amps):30mA
  • Noise Figure:2dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:14 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143B
  • Configuration:N-Channel Dual Gate

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BF1100,215

Overview

The BF1100 is a dual-gate enhancement-type MOS-FET designed for VHF and UHF applications. It operates with a supply voltage of 9 to 12 V and features a short channel transistor structure providing high forward transfer admittance relative to input capacitance. The device integrates an internal bias circuit to ensure superior cross-modulation performance during automatic gain control (AGC). It is available in SOT143 or SOT143R plastic microminiature packages.

Feature Summary

  • Dual-gate architecture with integrated internal bias circuit
  • Optimized for low noise amplification up to 1 GHz
  • Enhanced cross-modulation stability under AGC conditions
  • High forward transfer admittance to input capacitance ratio

Applications

  • Television tuners
  • Professional communications equipment
  • VHF amplifier stages
  • UHF amplifier stages

Procurement Notes

Verify the specific package variant required, as the BF1100 corresponds to the SOT143 outline while the BF1100R denotes the SOT143R variant. Confirm that the ordering suffix matches the intended physical footprint and marking code before finalizing procurement. Ensure static discharge protection protocols are maintained during handling due to gate sensitivity.

Selection Notes

Select this component for designs requiring stable gain control at VHF/UHF frequencies. The dual-gate configuration allows independent control of gain and isolation. Verify thermal resistance limits against the expected ambient temperature and power dissipation requirements. Ensure the drain-source voltage does not exceed the absolute maximum rating of 14 V during operation.

Part Context

This component belongs to NXP's discrete semiconductor portfolio, specifically within the field-effect transistor category. It serves as a specialized active element for radio frequency signal processing. The product specification defines its electrical characteristics and mechanical dimensions for integration into analog front-end circuits.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the source documentation.

BF1100,215BF1100,215

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