BF1100R,235

Overview

The BF1100R,235 is a dual-gate MOS-FET manufactured by NXP USA Inc. It operates at supply voltages of 9 to 12 V and features a short channel transistor with high forward transfer admittance relative to input capacitance. The device provides low noise gain-controlled amplification up to 1 GHz and superior cross-modulation performance during automatic gain control (AGC). It is housed in a plastic microminiature SOT-143R package.

Feature Summary

• Dual-gate enhancement type field-effect transistor architecture
• Integrated internal bias circuit for improved AGC cross-modulation
• High forward transfer admittance to input capacitance ratio

Applications

• VHF television tuners
• UHF television tuners
• Professional communications equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package configuration and tape-and-reel specifications. Confirm RoHS compliance status and product lifecycle stage through authorized distributors or direct manufacturer channels before procurement planning.

Selection Notes

Select this component for RF amplifier stages requiring low noise figure and stable gain control characteristics. Ensure the design accommodates the specified drain-source voltage limits and thermal resistance requirements for the SOT-143R package under intended operating conditions.

Part Context

This part belongs to the BF1100 series of dual-gate MOS-FETs designed for RF applications. The 'R' designation indicates the SOT-143R surface-mount package variant. These devices are engineered for linear amplification in broadcast and communication systems where signal integrity and low distortion are critical.

Replacement Considerations

BF1100R,215