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Product Detailed Parameters
- Description：RF MOSFET 9V CMPAK-4
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Bulk
- Technology：MOSFET (Metal Oxide)
- Frequency：800MHz
- Gain：-
- Voltage - Test：9 V
- Current Rating (Amps)：30mA
- Noise Figure：2dB
- Current - Test：10 mA
- Power - Output：-
- Voltage - Rated：14 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：CMPAK-4
- Configuration：N-Channel Dual Gate
Download product information
Overview
The BF1100WR is a dual-gate enhancement-type MOS-FET in an SOT343R plastic microminiature package. It features a short channel transistor with high forward transfer admittance to input capacitance ratio, designed for low noise gain-controlled amplification up to 1 GHz. Key electrical parameters include a drain-source voltage of 14 V, drain current of 30 mA, and total power dissipation of 280 mW. The device operates within a junction temperature range of -65 °C to +150 °C.
Feature Summary
- Specially designed for use at 9 to 12 V supply voltage
- Low noise gain controlled amplifier up to 1 GHz
- Superior cross-modulation performance during AGC
Applications
- Television tuners
- Professional communications equipment
- VHF applications
- UHF applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm exact packaging and marking codes. Confirm that the component status aligns with current production requirements, as discrete semiconductor specifications may undergo revisions. Ensure static discharge protection protocols are maintained during handling due to the sensitivity of the gate-source input.
Selection Notes
Select this component for designs requiring low-noise amplification in VHF and UHF bands. The dual-gate architecture supports effective automatic gain control (AGC) with minimal cross-modulation distortion. Verify that the operating voltage falls within the specified 9 V to 12 V range and that thermal management accommodates the 280 mW power dissipation limit.
Part Context
This part belongs to NXP Semiconductors' discrete semiconductor portfolio, specifically categorized under dual-gate MOS-FETs. It serves as a specialized active component for RF signal processing, distinct from general-purpose logic or power management ICs. The SOT343R package facilitates surface-mount integration into compact electronic assemblies.
Replacement Considerations
BF1101WR
FAQ
What is the maximum operating frequency?
The device is specified as a low noise gain controlled amplifier up to 1 GHz.
How does the device handle automatic gain control?
It incorporates an internal bias circuit to ensure superior cross-modulation performance during AGC operation.
What is the recommended supply voltage range?
The device is specially designed for use at 9 to 12 V supply voltage.
