BF1101WR,135

Overview

The BF1101WR,135 is an N-channel dual-gate MOS-FET encapsulated in the SOT-343R plastic package. It features a short channel transistor with high forward transfer admittance to input capacitance ratio. Key electrical parameters include a drain-source voltage of 7 V, continuous drain current of 30 mA, and total power dissipation of 200 mW. The device exhibits a typical forward transfer admittance of 30 mS and an input capacitance at gate 1 of 2.2 pF at 1 MHz.

Feature Summary

• Low noise gain controlled amplifier operation up to 1 GHz
• Partly internal self-biasing circuit for good cross-modulation performance during AGC
• Integrated diodes between gates and source protect against excessive input voltage surges

Applications

• Television tuners
• Professional communications equipment
• VHF applications with 3 to 7 V supply voltage
• UHF applications with 3 to 7 V supply voltage

Procurement Notes

Verify component authenticity through authorized channels as this part may be obsolete. Confirm the specific SOT-343R package variant matches design requirements. Review the latest datasheet for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement specifications.

Selection Notes

Select this component for low-noise RF amplification where dual-gate control is required. Ensure the operating environment stays within the specified junction temperature range. Verify that the 7 V drain-source voltage limit accommodates the system's peak supply conditions without exceeding absolute maximum ratings.

Part Context

This device belongs to the BF1101 series of N-channel dual-gate MOS-FETs manufactured by NXP Semiconductors. It is designed specifically for enhancement-type field-effect applications requiring source and substrate interconnection. The WR suffix denotes the SOT-343R surface-mount package configuration.

Replacement Considerations

BF1101; BF1101R

FAQ

What is the function of the integrated diodes?

Integrated diodes between gates and source protect against excessive input voltage surges.

How does the self-biasing circuit affect performance?

It ensures good cross-modulation performance during AGC and provides good DC stabilization.

What is the reverse transfer capacitance value?

The reverse transfer capacitance (Crss) is typically 25 fF and has a maximum of 35 fF at 1 MHz.