BF1102,115

Overview

The BF1102,115 is a dual N-channel dual-gate MOS-FET in a SOT363 package. It integrates two low-noise gain-controlled amplifiers with shared source and gate 2 pins. Designed for 5 V applications, it features high forward transfer admittance and superior cross-modulation performance during automatic gain control (AGC). The device includes an internal bias circuit for DC stabilization and integrated diodes between gates and source to protect against excessive input voltage surges.

Feature Summary

• Integrates two equal dual-gate MOS-FETs within a single micro-miniature plastic package
• Features an internal bias circuit enabling DC stabilization and excellent cross-modulation performance at 5 V supply voltage
• Includes integrated diodes between the gates and source to provide protection against excessive input voltage surges

Applications

• Gain controlled low noise amplifier for VHF applications
• Gain controlled low noise amplifier for UHF applications
• Television tuners
• Professional communications equipment

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm the component status as discontinued or historical reference before procurement planning. Ensure design compatibility with legacy specifications provided in the product specification document. Validate that the application does not require automotive qualification standards.

Selection Notes

Select this component for designs requiring dual low-noise amplification in a compact surface-mount footprint. The device is optimized for 5 V operation with specific attention to cross-modulation metrics. Consider the shared pin configuration when laying out the schematic. Verify thermal resistance limits against the expected power dissipation requirements of the target application.

Part Context

This component belongs to the discrete semiconductor category, specifically field-effect transistors. It utilizes a plastic SOT363 package with six terminals. The technology is based on enhancement type MOS-FET structures. The product specification supersedes earlier data from July 1999, establishing the definitive electrical characteristics for the BF1102 series.

Replacement Considerations

BF1102R is the reel-pack variant of the same device family.