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The BF1105,215 is an N-channel dual-gate MOS-FET encapsulated in the SOT-143R plastic package. It operates with a drain-source voltage of 7 V and a continuous drain current of 30 mA. The device features a total power dissipation of 200 mW at temperatures up to 80 °C. Key electrical parameters include a forward transfer admittance of 25 to 31 mS and a noise figure ranging from 1.7 to 2.5 dB at 800 MHz. Internal self-biasing ensures DC stabilization.
Verify the specific suffix '215' corresponds to the SOT-143R reverse pinning configuration as defined in the product specification. Confirm that the component status aligns with current manufacturing availability, as discrete semiconductor products may undergo lifecycle changes. Ensure design compatibility with the specified 5 V supply voltage requirements for intended VHF/UHF operations.
Select this component for designs requiring dual-gate isolation and low noise figures around 800 MHz. The SOT-143R package suits surface-mount assembly processes. Consider the 7 V maximum rating when designing bias networks. Verify thermal management capabilities given the 200 mW power dissipation limit at ambient temperatures up to 80 °C.
This part belongs to the BF1105 family of N-channel dual-gate MOS-FETs manufactured by NXP Semiconductors. The family includes variants such as BF1105 (SOT-143B) and BF1105WR (SOT-343R). These devices are enhancement-type field-effect transistors designed specifically for RF applications requiring high forward transfer admittance relative to input capacitance.
BF1105R serves as the direct equivalent for the SOT-143R package variant within the same product series.