BF1107,215

Overview

The BF1107 is a depletion-type N-channel single gate MOSFET housed in a SOT23 plastic surface-mounted package. It functions as a currentless RF switch with low on-state insertion loss and high off-state isolation across the 50 MHz to 860 MHz frequency range. The device features interchangeable drain and source terminals and includes integrated protection diodes between the gate-source and gate-drain junctions to guard against excessive input voltage surges.

Feature Summary

• Depletion mode operation enabling currentless RF switching capabilities
• Integrated gate-source and gate-drain protection diodes for surge immunity
• Interchangeable drain and source terminal configuration

Applications

• Passive loop through circuits for VCR tuners
• Transceiver signal path switching

Procurement Notes

Verify the specific ordering suffix matches the required packaging variant, as standard data sheets may reference multiple tape-and-reel or tray options. Confirm the component status is active production rather than obsolete or preliminary. Ensure ESD handling protocols are strictly followed during assembly due to the sensitivity of the MOSFET gate structure. Cross-reference the marking code 'S3p' with physical inspection to validate authenticity upon receipt.

Selection Notes

Select this component for applications requiring low-loss RF signal routing within the UHF band. The depletion mode characteristic allows for normally-on behavior without continuous gate bias power. Consider the low thermal resistance to solder point when designing heat dissipation paths. Verify that the maximum drain-source voltage rating aligns with the peak signal levels present in the target circuit environment.

Part Context

This device belongs to the family of discrete RF MOSFET transistors designed for high-frequency analog switching. It utilizes a planar silicon technology optimized for minimal parasitic capacitance. The SOT23 package provides a compact footprint suitable for space-constrained printed circuit board layouts in consumer electronics and communication equipment.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

FAQ

Are the drain and source terminals distinct?

No, the drain and source terminals are interchangeable, allowing for flexible orientation during PCB layout.

What protection mechanisms are included?

The device integrates diodes between the gate-source and gate-drain terminals to protect against excessive input voltage surges.

What is the operating mode of this MOSFET?

It is a depletion-type N-channel MOSFET, meaning it conducts current when the gate-source voltage is zero.