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The BF1109R,215 is an enhancement type N-channel RF MOSFET from the BF110 series, manufactured by NXP USA Inc. It features a dual-gate configuration with source and substrate interconnected, housed in a SOT-143R surface-mount package. The device is rated for a drain-source voltage of 11V and operates with a test current of 30mA at a Vgs of 9V. Designed for high-frequency applications, it supports operation up to 800MHz. The component complies with RoHS3 standards and carries an EAR99 classification.
Verify component authenticity through official NXP channels or authorized distributors. Confirm RoHS3 compliance status prior to integration. Check for potential tariff implications when shipping to the United States. Ensure storage conditions adhere to MSL Level 1 requirements to prevent moisture damage during assembly processes.
Select this component for designs requiring dual-gate RF amplification in small form factors. Consider the 11V rating and 800MHz frequency limit for circuit compatibility. Evaluate thermal management needs for SOT-143R packaging. Compare against similar BF110 series parts if specific gain or noise figure variations are required for the application.
Part of the BF110 series of RF discrete semiconductors. Shares the SOT-143R package and dual-gate topology with variants like BF1100R and BF1108R. Differentiated by specific voltage ratings and performance characteristics tailored for distinct RF power levels within the same product family.
No public confirmed substitute part numbers are available in the provided documentation. Designers should consult NXP directly for cross-reference recommendations or consider redesigning around available alternatives if obsolescence is a concern.